Distinct ρ-Based DGMOSFET Low Power Circuit for Stable Read and Write CAM Cell

Abstract

 In recent research works, content-addressable memory (CAM) has become an important device design for high-speed in-memory search for pattern-matching operations by searching memory data with stored content in memory locations in one cycle of memory read, rather than finding the stored memory content through data address. Such CAM circuit designs remain a challenge in consuming high power, as the CAM cell circuit suffers from sharing of short circuit current path and charge stored across the short circuit match-line (ML). In recent literature, MOSFET-based CAM designs suffer from a delay in ML search and utilize high power in the charge control circuit. In the proposed work, through a distinct ρ-based DGMOSFET device a ballistic transport mobility equation is described to estimate the ML short circuit current path and charge as a consequence of low power static and transient performances at CAM cell circuit level to stabilize the content during read and write operation to limit the search delay in ML and device power consumption. The proposed model is simulated using 90-nm-technology and comparative results show proposed low-power-CAM-cell circuit through Distinct ρ-based DGMOSFET device limits the sharing of short circuit current path and charge by reducing power consumption effectively.

URN:NBN:sciencein.jist.2023.v11.477

Correction: The pubished new version of article (10 Apr-23) have the correction update from correponding author in the list of authors (approved by all authors - correction note).