Optoelectronic properties of single and array of 1-D III-nitride nanostructures: An approach to light-driven device and energy resourcing

1-D III-nitride nanostructures

Authors

  • Avinash Patsha Indira Gandhi Centre for Atomic Research
  • Sandip Dhara Indira Gandhi Centre for Atomic Research
  • Surojit Chattopadhyay National Yang Ming University
  • Kuei-Hsien Chen National Taiwan University
  • Li-Chyong Chen National Taiwan University

Keywords:

nanolaser, hydrogen generation, Solar Cell, fuel cells

Abstract

One dimensional (1-D) group III-nitride nanostructures are important components of optoelectronic devices owing to its unique feature of unidirectional carrier flow, and efficient electrical connectivity. The group III-nitride materials are attractive for the application as low power white and blue–green light sources provide a green and extended operational life. We discuss the luminescence phenomena observed in single or arrayed 1-D III-nitride nanostructures including quantum wells. The role of these 1-D nanostructures is critically reviewed in the field of ‘green’ energy generation, namely hydrogen source in fuel cells, the photoelectrochemical workhorse in renewable energy resourcing, and in solar cells.

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Author Biography

  • Sandip Dhara, Indira Gandhi Centre for Atomic Research

    Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam-603102, India

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Published

2018-05-03

Issue

Section

Review Articles

How to Cite

(1)
Patsha, A.; Dhara, S.; Chattopadhyay, S.; Chen, K.-H.; Chen, L.-C. Optoelectronic Properties of Single and Array of 1-D III-Nitride Nanostructures: An Approach to Light-Driven Device and Energy Resourcing. J Mater NanoSci 2018, 5 (1), 1-22.